Dr. Hareesh Chandrasekar
Co-Founder & CEO
Founded in 2019, AGNIT Semiconductors aims to be the leading Gallium Nitride semiconductor component manufacturer for the radio-frequency and power electronics industry. “At AGNIT we provide GaN wafers and devices for both wireless communication applications such as for civilian 5G, connectivity for large industrial installations, remote connectivity from space, rural connectivity, and drones and for power electronics applications such as in electric vehicles and data centers. Our GaN technology offers a range of benefits that enable key advances in wireless communication, military radar systems, and power conversion for fast charging of
The firm is a spin off from the Indian Institute of Science(IISc), Bangalore, and has differentiated IP across the GaN materials, processes, and devices s developed over 15 years of R&D from IISc.
AGNITs GaN components offer compelling advantages in terms of efficiency, speed, size, & reliability for the next generation of wireless power electronics & is also committed to delivering customizable solutions that meet the specific needs of its customers
The firm offers a range of flagship products that leverage the superior material properties of GaN semiconductors. “Our current offerings include GaN wafers and GaN radio frequency transistors, which are suitable for 5G base station radios and defense requirements. Our firm’s innovative GaN technology solutions have the potential to shape the broader electronics market over the next 10-15 years”, says Hareesh. With such a wide range of products, the company has certain USPs that have helped it distinguish out from the competition. “AGNIT Semiconductors’ USP is centered around three key pillars customizability, convenience, and cost effectiveness. Our GaN components are not a drop-in replacement for existing silicon components, which means that custom designed circuits and devices are required to extract the best possible performance and we also provide ease of access to GaN technology and an assured supply chain for both the first and second source of components”, mentions Hareesh.
AGNIT’s dedication to manufacturing high quality Gallium Nitride components is evident in its partnership with the Gallium Nitride Ecosystem Enabling Centre and Incubator, a MEITY funded incubator being set up at IISc, Bangalore. “This incubation center provides access to a dedicated pilot production line for AGNIT’s GaN technology, allowing for specialized manufacturing in a cleanroom environment with highly skilled engineers and scientists. With a focus on quality and expertise, we at AGNIT are well-positioned to deliver reliable and robust GaN components to our customers”, speaks Hareesh.
For future roadmap AGNIT aims to become a recurring part of system manufacturers bill of materials for telecom and defense equipment in the next few years. With strong demand for 5G radios and nextgeneration radars, AGNIT’s GaN semiconductor technology is set to shape the future of electronics hardware in these markets over the next decade. The firm also plans to expand its product portfolio with differentiated GaN wafers and radiofrequency components for a wide range of wireless communication use cases.